Abstract— Highly transparent and lowresistive multi-layered gate electrodes, MoO₃/ITO/Ag/ZnS (MIAZ)playing as the high-work-function layer, the non-reactive interface layer, thelateral conduction layer, and the index-matching layer, respectively, have beeninvestigated for the application to the transparent oxide TFT. Thetransmittance of the optimized MIAZ electrode is 92.46 % and the sheetresistance is 7.77 Ω/□. The top gate InGaZnO TFT with this gate electrode showsthe mobility of 11.57 cm²/(V∙s) and positive V_th of 0.210V compared to that with single ITO gate electrode of which V_this  - 0.086 V.